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NLAS3158MNR2G +BOM

Analog Switch, Low Voltage, Dual SPDT, Dual 2:1 Multiplexer

NLAS3158MNR2G General Description

ON Semiconductor's NLAS3158MNR2G is a versatile N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) housed in a compact Micro8TM package. This FET can be directly driven by logic level signals from microcontrollers or digital circuits, thanks to its low gate threshold voltage. With low on-state resistance (RDS(ON)) and a high drain-source voltage rating, it is well-suited for switching applications in battery-powered devices, power management circuits, and low-voltage applications. The NLAS3158MNR2G also offers ESD protection, ensuring its reliability in harsh environments. Its small form factor, low power consumption, and robust performance characteristics make it an efficient solution for circuit designers seeking high-performance switching solutions in space-constrained applications

Key Features

  • Compact design for space-saving
  • Suitable for high-frequency applications due to low on-resistance
  • Faster switching and reduced noise

Application

  • Clear and crisp audio-visual experience.
  • Intuitive controls for easy handling.
  • Sturdy construction for lasting durability.

Specifications

Source Content uid NLAS3158MNR2G Pbfree Code Yes
Part Life Cycle Code End Of Life Pin Count 12
Reach Compliance Code compliant HTS Code 8542.39.00.01
Factory Lead Time 38 Weeks Analog IC - Other Type SPDT
JESD-30 Code R-XDSO-N12 Moisture Sensitivity Level 1
Number of Channels 1 Number of Functions 2
Number of Terminals 12 Output SEPARATE OUTPUT
Peak Reflow Temperature (Cel) 260 Surface Mount YES
Switching BREAK-BEFORE-MAKE Technology CMOS
Temperature Grade MILITARY Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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