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NSVF6003SB6T1G +BOM

RF Transistor, NPN Single, 12 V, 150 mA, fT = 7 GHz

NSVF6003SB6T1G General Description

Boasting impressive features and capabilities, the NSVF6003SB6T1G RF transistor is an ideal choice for low noise amplifier applications. Its CPH package design allows it to effectively dissipate heat, making it suitable for use in high temperature environments. The AEC-Q101 qualification and PPAP capability of this transistor make it a reliable option for automotive applications, ensuring that it meets the rigorous standards for performance and durability. With its exceptional performance and robust design, the NSVF6003SB6T1G is a top contender in the realm of RF transistors

ON Semiconductor, LLC Inventory

Key Features

  • AEC-Q101 qualified and PPAP capable
  • Pb-Free, Halogen Free and RoHS compliance
  • High Current (IC = 150 mA)
  • Ultra miniature and thin 6 pin package
  • Large Collector Dissipation (800 mW)
  • High Gain (fT = 7 GHz typ)
ON Semiconductor, LLC Original Stock

Application

  • Low Noise Amplifier
ON Semiconductor, LLC Inventory

Specifications

Status Active Case Outline 318BD
MSL Temp (°C) 260 Container Type REEL
Product Category RF Bipolar Transistors Transistor Type Bipolar
Technology Si Transistor Polarity NPN
Operating Frequency 7 GHz DC Collector/Base Gain hfe Min 100
Collector- Emitter Voltage VCEO Max 12 V Emitter- Base Voltage VEBO 2 V
Continuous Collector Current 150 mA Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Configuration Single
Mounting Style SMD/SMT Qualification AEC-Q101
Maximum DC Collector Current 150 mA Pd - Power Dissipation 800 mW
Product Type RF Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Unit Weight 0.000529 oz

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NSVF6003SB6T1G Datasheet PDF

Preliminary Specification NSVF6003SB6T1G PDF Download

NSVF6003SB6T1G PDF Preview