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See Technical Specifications

OPA835IDBVR +BOM

Op Amp Single Low Power Amplifier R-R O/P 5.5V 6-Pin SOT-23 T/R

Manufacturer:

TI
Mfr.Part #:

OPA835IDBVR
Datasheet:

OPA835IDBVR Datasheet (PDF)
Architecture:

Voltage FB
Number Of Channels:

1
Total Supply Voltage (+5 V = 5, ±5 V = 10) (min) (V):

2.5
Total Supply Voltage (+5 V = 5, ±5 V = 10) (max) (V):

5.5
EDA/CAD Models:

Request Free CAD Models for OPA835IDBVR

OPA835IDBVR General Description

One standout feature of the OPA835 is its RUN package option, which includes integrated gain-setting resistors for a compact footprint on a printed-circuit-board. With gains ranging from +1 to +8 and inverting attenuations available, the OPA835 offers flexibility in circuit design while maintaining a small form factor. This adaptability allows for optimized performance in a variety of applications without sacrificing board space

Key Features

Silicon-Based
High-Speed Performance
Low Power Consumption
Wide Operating Temperature Range
Robust Noise Immunity
Compact Footprint Size

Specifications

Architecture	Voltage FB	Number of channels	1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	2.5	Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	5.5
GBW (typ) (MHz)	30	BW at Acl (MHz)	56
Acl, min spec gain (V/V)	1	Slew rate (typ) (V/µs)	160
Vn at flatband (typ) (nV√Hz)	9.3	Vn at 1 kHz (typ) (nV√Hz)	9.3
Iq per channel (typ) (mA)	0.25	Vos (offset voltage at 25°C) (max) (mV)	0.5
Rail-to-rail	In to V-, Out	Features	Integrated gain setting, Shutdown
Rating	Catalog	Operating temperature range (°C)	-40 to 125
CMRR (typ) (dB)	113	Input bias current (max) (pA)	400000
Offset drift (typ) (µV/°C)	2.25	Iout (typ) (mA)	40
2nd harmonic (dBc)	70	3rd harmonic (dBc)	73
Frequency of harmonic distortion measurement (MHz)	1