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PBSS3515VS +BOM

Bipolar Transistors - BJT

PBSS3515VS General Description

PNP low V double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS2515VS

Key Features

  • 300 mW total power dissipation
  • Very small 1.6 x 1.2 mm ultra thin package
  • Self alignment during soldering due to straight leads
  • Low collector-emitter saturation voltage
  • High current capability
  • Improved thermal behavior due to flat leads
  • Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
  • Reduces required PCB area
  • Reduced pick and place costs

Application

  • General purpose switching and muting
  • Low frequency driver circuits
  • Audio frequency general purpose amplifier applications
  • Battery driven equipment (mobile phones, video cameras and hand-held devices)

Specifications

Source Content uid PBSS3515VS Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Date Of Intro 2017-02-01 Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 15 V Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 200 JESD-30 Code R-PDSO-F6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 6
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type PNP
Surface Mount YES Terminal Finish TIN
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 280 MHz

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