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See Technical Specifications

PBSS8110Z +BOM

Bipolar Transistors - BJT

Manufacturer:

NXP
Mfr.Part #:

PBSS8110Z
Datasheet:

PBSS8110Z Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Transferred
Pin Count:

4
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for PBSS8110Z

PBSS8110Z General Description

NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS9110Z.

Key Features

Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified

Application

High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications

Specifications

Source Content uid	PBSS8110Z	Pbfree Code	Yes
Part Life Cycle Code	Transferred	Pin Count	4
Reach Compliance Code	compliant	ECCN Code	EAR99
Case Connection	COLLECTOR	Collector Current-Max (IC)	1 A
Collector-Emitter Voltage-Max	100 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	150	JESD-30 Code	R-PDSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	1.4 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Tin (Sn)	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	100 MHz