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PMCM6501VNEZ +BOM

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

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PMCM6501VNEZ General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Nexperia Semiconductor (NXP) Inventory

Key Features

  • Low threshold voltage
  • Ultra small package: 0.98 × 1.48 × 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
Nexperia Semiconductor (NXP) Original Stock

Application

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
Nexperia Semiconductor (NXP) Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series -
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V Current - Continuous Drain (Id) @ 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 18mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 6 V
FET Feature - Power Dissipation (Max) 556mW (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number PMCM6501 feature-packaging Tape and Reel
feature-rad-hard feature-pin-count 6
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified No
feature-aec-qualified-number feature-auto-motive No
feature-p-pap No feature-eccn-code EAR99
feature-svhc No feature-svhc-exceeds-threshold No

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 6,634

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.755 $0.76
200+ $0.293 $58.60
500+ $0.283 $141.50
1000+ $0.277 $277.00

The prices below are for reference only.

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