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RF Transistor NPN 15V 50mA 600MHz 350mW Through Hole TO-92-3
TO-92-3Manufacturer:
onsemi
Mfr.Part #:
PN918
Datasheet:
Transistor Type:
Bipolar
Technology:
Si
Transistor Polarity:
NPN
Operating Frequency:
600 MHz
EDA/CAD Models:
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RF Transistor NPN 15V 50mA 600MHz 350mW Through Hole TO-92-3
Product Category | RF Bipolar Transistors | Series | PN918 |
Transistor Type | Bipolar | Technology | Si |
Transistor Polarity | NPN | Operating Frequency | 600 MHz |
DC Collector/Base Gain hfe Min | 20 | Collector- Emitter Voltage VCEO Max | 15 V |
Emitter- Base Voltage VEBO | 3 V | Continuous Collector Current | 50 mA |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Configuration | Single | Mounting Style | Through Hole |
Collector- Base Voltage VCBO | 30 V | DC Current Gain hFE Max | 20 at 3 mA at 1 V |
Gain Bandwidth Product fT | 600 MHz (Min) | Height | 5.33 mm |
Length | 5.2 mm | Maximum DC Collector Current | 50 mA |
Pd - Power Dissipation | 350 mW | Product Type | RF Bipolar Transistors |
Factory Pack Quantity | 2000 | Subcategory | Transistors |
Type | RF Bipolar Small Signal | Width | 4.19 mm |
Unit Weight | 0.007090 oz |
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