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Robust and efficient RF amplifier solutions utilizing RF MOSFET technology with high power density
H-37248H-4Manufacturer:
Wolfspeed
Mfr.Part #:
PTAC260302FC-V1-R250
Datasheet:
Transistor Polarity:
Dual N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
65 V
Rds On - Drain-Source Resistance:
800 mOhms
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Avaq Semiconductor offers the highly versatile and reliable PTAC260302FC-V1-R250 driver, produced by Wolfspeed. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the PTAC260302FC-V1-R250.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Product Category | RF MOSFET Transistors | Transistor Polarity | Dual N-Channel |
Technology | Si | Vds - Drain-Source Breakdown Voltage | 65 V |
Rds On - Drain-Source Resistance | 800 mOhms | Operating Frequency | 2.62 GHz to 2.69 GHz |
Gain | 15.5 dB | Output Power | 30 W |
Maximum Operating Temperature | + 225 C | Mounting Style | SMD/SMT |
Number of Channels | 2 Channel | Product Type | RF MOSFET Transistors |
Factory Pack Quantity | 250 | Subcategory | MOSFETs |
Transistor Type | LDMOS FET | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 10 V |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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