This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

QM50HA-H +BOM

Take your device to the next level with this powerful and efficient processor solution

Manufacturer:

Mitsubishi Electric
Mfr.Part #:

QM50HA-H
Datasheet:

QM50HA-H Datasheet (PDF)
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
Collector Current-Max (IC):

50 A
Configuration:

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

QM50HA-H General Description

The QM50HA-H transistor is a powerhouse in the world of high-power switching NPN bipolar transistors. With its impressive collector-emitter voltage of 1000V and a collector current of 50A, this transistor is ready to tackle even the most demanding industrial applications. Whether it's motor control, power supplies, or inverters, the QM50HA-H has the muscle to get the job done

Key Features

Fast response time for dynamic control
Robust electrical insulation protection
Durable construction for harsh environments

Precise motor speed control capabilities
High-speed communication interfaces available
Wide operating temperature range

Application

Robotic arm control
LED lighting systems
UPS backup power

Specifications

Part Life Cycle Code	Obsolete	ECCN Code	EAR99
Collector Current-Max (IC)	50 A	Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)	75	Fall Time-Max (tf)	3000 ns
JESD-30 Code	R-PUFM-X3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Polarity/Channel Type	NPN	Power Dissipation-Max (Abs)	310 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Transistor Element Material	SILICON	VCEsat-Max	2 V