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R1RW0416DSB-2PR#D1 +BOM

High-performance 4M asynchronous SRAM

Manufacturer:

RENESAS
Mfr.Part #:

R1RW0416DSB-2PR#D1
Datasheet:

R1RW0416DSB-2PR#D1 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

44
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for R1RW0416DSB-2PR#D1

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R1RW0416DSB-2PR#D1 General Description

Moreover, the R1RW0416D comes in both LVersion and S-Version models, offering users the choice of low power consumption options that are particularly beneficial for battery backup systems. The package includes a 400-mil 44-pin SOJ and a 400-mil 44-pin plastic TSOPII, ensuring easy and efficient high-density surface mounting in various electronic devices. Whether you require rapid data access for critical operations or seek energy-efficient memory solutions for portable devices, the R1RW0416D is a versatile and reliable choice that excels in both performance and power efficiency. Experience the seamless integration of High-Speed technology and efficient design with the R1RW0416D static RAM unit

Key Features

RW04 module specs:
Type: SODIMM
Voltage: 1.2V
Clockspeed: 2133MHz
Capacity: 4GB
Pins: 260

Specifications

Source Content uid	R1RW0416DSB-2PR#D1	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	44
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.41	JESD-30 Code	R-PDSO-G44
Memory IC Type	STANDARD SRAM	Memory Organization	256KX16
Memory Width	16	Moisture Sensitivity Level	3
Number of Functions	1	Number of Terminals	44
Number of Words Code	256000	Operating Mode	ASYNCHRONOUS
Parallel/Serial	PARALLEL	Surface Mount	YES
Technology	CMOS	Temperature Grade	COMMERCIAL
Terminal Form	GULL WING	Terminal Position	DUAL