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See Technical Specifications

R6015ANZ +BOM

Power Field-Effect Transistor with a 15A current rating, 600V voltage capability, and 0.3ohm resistance

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

R6015ANZ
Datasheet:

R6015ANZ Datasheet (PDF)
Technology:

Si
Transistor Polarity:

N-Channel
Vds - Drain-Source Breakdown Voltage:

600 V
Id - Continuous Drain Current:

15 A
EDA/CAD Models:

Request Free CAD Models for R6015ANZ

Email: [email protected]

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Tel: +852 95804164

R6015ANZ General Description

Featuring a minimum CTR of 300% at 5 mA forward current, the R6015ANZ optocoupler guarantees consistent and accurate data transmission in high-speed systems. Its maximum propagation delay of 70 ns further enhances its suitability for applications requiring quick response times. The compact 8-pin DIP package not only simplifies integration into electronic circuits but also meets safety standards with adequate creepage and clearance distances

Key Features

16-bit timer/counter with PWM capability
Dedicated USB interface for rapid data transfer
Built-in temperature sensor and humidity detector

Application

Efficient for smart grids
Ideal for building control
Recommended for UPS systems

Specifications

Product Category	MOSFET	Technology	Si
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	15 A	Product Type	MOSFET
Subcategory	MOSFETs	Part # Aliases	R6015ANZC8