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See Technical Specifications

RC28F00AM29EWHA +BOM

64-Pin Fortified BGA Tray

Manufacturer:

Micron Technology
Mfr.Part #:

RC28F00AM29EWHA
Datasheet:

RC28F00AM29EWHA Datasheet (PDF)
Series:

M29EW
Memory Type:

NOR
EDA/CAD Models:

Request Free CAD Models for RC28F00AM29EWHA

RC28F00AM29EWHA General Description

Intel's RC28F00AM29EWHA stands out as a dependable storage solution for applications such as data centers, cloud computing, and enterprise storage solutions. With its advanced NAND flash technology, the device offers high endurance and data retention capabilities, making it a reliable choice for demanding computing environments. Additionally, the RC28F00AM29EWHA features built-in security features to protect data from unauthorized access, providing added peace of mind for users

Key Features

Architecture
— Symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (32,64,128 Mbit densities)
— 95 ns Initial Access Speed (256Mbit only)
— 25 ns 8-word and 4-word Asynchronous page-mode reads
— 32-Byte Write buffer; 4 µs per Byte Effective programming time
System Voltage
— VCC = 2.7 V to 3.6 V
— VCCQ = 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP (32, 64, 128, 256 Mbit)
— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)
Security
— Enhanced security options for code protection
— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits
— Absolute protection with VPEN = GND
— Individual block locking
— Block erase/program lockout during power transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process technology