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See Technical Specifications

RD12MVS1 +BOM

Compact and reliable, this RF power transistor delivers high performance in demanding applications

Manufacturer:

Mitsubishi Electric
Mfr.Part #:

RD12MVS1
Datasheet:

RD12MVS1 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

10
ECCN Code:

EAR99

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable RD12MVS1 driver, produced by Mitsubishi Electric. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the RD12MVS1.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	10	ECCN Code	EAR99
Case Connection	SOURCE	Configuration	SINGLE
DS Breakdown Voltage-Min	50 V	Drain Current-Max (Abs) (ID)	4 A
Drain Current-Max (ID)	4 A	FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	VERY HIGH FREQUENCY BAND	JESD-30 Code	R-XQCC-N3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	125 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	50 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Form	NO LEAD
Terminal Position	QUAD	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON