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RD3L080SNTL1 +BOM

RD3L080SNTL1 Power FET

email Email: [email protected]
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tel Tel: +852 95804164

RD3L080SNTL1 General Description

N-Channel 60 V 8A (Ta) 15W (Tc) Surface Mount TO-252

Application

SWITCHING

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Date Of Intro 2017-07-24 Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A Drain-source On Resistance-Max 0.109 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A Surface Mount YES
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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