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See Technical Specifications

RD3L220SNTL1 +BOM

Transistor with Power Field-Effect

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RD3L220SNTL1
Datasheet:

RD3L220SNTL1 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for RD3L220SNTL1

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RD3L220SNTL1 General Description

N-Channel 60 V 22A (Ta) 20W (Tc) Surface Mount TO-252

Application

SWITCHING

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Date Of Intro	2017-07-24	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	22 A	Drain-source On Resistance-Max	0.033 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	44 A	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	22 A
Rds On - Drain-Source Resistance	18 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	30 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	20 W	Channel Mode	Enhancement
Series	RD3L	Fall Time	65 ns
Product Type	MOSFET	Rise Time	45 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	75 ns
Typical Turn-On Delay Time	25 ns	Part # Aliases	RD3L220SN
Unit Weight	0.012699 oz