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20V P-Type Metal-Oxide-Semiconductor Field-Effect Transistor with a current rating of 0.2A, housed in a 3-pin SOT-416FL package, supplied on a reel
SC-89,SOT-490Manufacturer:
Mfr.Part #:
RE1C002ZPTL
Datasheet:
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
EDA/CAD Models:
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With its ultra-low ON-resistance, the RE1C002ZPTL MOSFET delivers exceptional performance in terms of power efficiency, making it well-suited for mobile equipment. The use of micro-processing technologies further enhances its capabilities, ensuring that it meets the stringent demands of modern electronic devices. The wide lineup of MOSFETs expands the application possibilities, providing options for compact designs, high-power requirements, and complex configurations. This versatility is a key advantage for manufacturers seeking reliable components that can address various market needs effectively
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V | Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 100µA | Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V |
Vgs (Max) | ±10V | Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V |
Power Dissipation (Max) | 150mW (Ta) | Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | RE1C002 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
10+ | $0.052 | $0.52 |
100+ | $0.046 | $4.60 |
300+ | $0.043 | $12.90 |
3000+ | $0.040 | $120.00 |
6000+ | $0.038 | $228.00 |
9000+ | $0.038 | $342.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
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