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RGTH60TS65DGC11 +BOM

Advanced Power Conversion Solution for Industrial U

RGTH60TS65DGC11 General Description

IGBT Trench Field Stop 650 V 58 A 194 W Through Hole TO-247N

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Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.6 V
Maximum Gate Emitter Voltage - 30 V, 30 V Continuous Collector Current at 25 C 58 A
Pd - Power Dissipation 194 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Series RGTH60TS65
Continuous Collector Current 30 A Continuous Collector Current Ic Max 58 A
Gate-Emitter Leakage Current +/- 200 nA Operating Temperature Range - 40 C to + 175 C
Product Type IGBT Transistors Factory Pack Quantity 450
Subcategory IGBTs Part # Aliases RGTH60TS65D
Unit Weight 0.070548 oz

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In Stock: 7,395

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.661 $1.66
200+ $0.644 $128.80
450+ $0.621 $279.45
900+ $0.610 $549.00

The prices below are for reference only.

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