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Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, 3 PIN
CPT3Manufacturer:
Mfr.Part #:
RK3055ETL
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
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Product RK3055ETL is a N-Channel Power MOSFET that boasts a Continuous Drain Current (Id) of 4A, making it suitable for various power applications. With a Drain Source Voltage (Vds) of 60V and an On Resistance (Rds(on)) of 150mohm, this transistor offers efficient performance. The Threshold Voltage (Vgs) Typ is 2.5V, ensuring reliable operation within a wide Operating Temperature Range of -55°C to +150°C
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 8 A | Rds On - Drain-Source Resistance | 150 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 20 W |
Channel Mode | Depletion | Configuration | Single |
Fall Time | 20 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 20 ns | Factory Pack Quantity | 1 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 50 ns |
Typical Turn-On Delay Time | 5 ns | Width | 5.5 mm |
Part # Aliases | RK3055E | Unit Weight | 0.011640 oz |
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