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See Technical Specifications

SBAS21DW5T1G +BOM

1 phase RECTIFIER DIODE with 2 elements, Silicon, 0.2A, 250V V(RRM)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SBAS21DW5T1G
Datasheet:

SBAS21DW5T1G Datasheet (PDF)
Diode Configuration:

2 Independent
Technology:

Standard
Voltage - DC Reverse (Vr) (Max):

250 V
Current - Average Rectified (Io) (per Diode):

200mA (DC)

SBAS21DW5T1G General Description

Engineers can trust in the quality and durability of the SBAS21DW5T1G product for their high voltage switching requirements. The advanced design of this dual diode device ensures optimal performance in demanding environments, delivering consistent results and long-term reliability. The encapsulation in a SOT-23 surface mount package further enhances the product's suitability for various electronic designs, offering ease of assembly and integration

Key Features

A high-speed switching diode for demanding applications
This Schottky Barrier Diode offers reliable rectification and protection
A compact SMB package ensures efficient circuit design
SBAS21DW5T1G features a low leakage current for precise control
0.39V forward voltage enables fast switching and high efficiency
30V maximum reverse voltage withstands various electronic loads

Specifications

Category	Discrete Semiconductor ProductsDiodesRectifiersDiode Arrays	Series	-
Diode Configuration	2 Independent	Technology	Standard
Voltage - DC Reverse (Vr) (Max)	250 V	Current - Average Rectified (Io) (per Diode)	200mA (DC)
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 200 mA	Speed	Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)	50 ns	Current - Reverse Leakage @ Vr	100 nA @ 200 V
Operating Temperature - Junction	150°C (Max)	Mounting Type	Surface Mount
Base Product Number	SBAS21