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SHF-0289 +BOM

A high-frequency transistor for advanced communication systems, offering exceptional performance and reliability

email Email: [email protected]
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tel Tel: +852 95804164

Key Features

  • Patented GaAs Heterostructure FET Technology
  • +30dBm Output Power at 1dB Compression
  • +46dBm Output IP3
  • High Drain Efficiency: Up to 40% at Class AB
  • 13 dB Gain at 900MHz (Application circuit)
  • 13 dB Gain at 1900MHz (Application circuit)

Specifications

Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code ECCN Code EAR99
HTS Code 8541.29.00.75 Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 9 V
Drain Current-Max (ID) 0.4 A FET Technology HETERO-JUNCTION
Highest Frequency Band C BAND JESD-30 Code R-PSSO-F3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode DEPLETION MODE
Operating Temperature-Max 165 °C Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 7 W Power Gain-Min (Gp) 13.1 dB
Qualification Status Not Qualified Surface Mount YES
Terminal Form FLAT Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material GALLIUM ARSENIDE

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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