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Product Description: SI1304BDL-T1-E3
SC-70,SOT-323Manufacturer:
Vishay Siliconix
Mfr.Part #:
SI1304BDL-T1-E3
Datasheet:
Series:
TrenchFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
30 V
EDA/CAD Models:
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The SI1304BDL-T1-E3 is a reliable and efficient solution for power semiconductor needs. Its advanced design and robust construction ensure long-term performance and dependability in various industrial applications. With its impressive specifications and environmental compliance, this MOSFET is a smart choice for engineers looking to optimize power efficiency and performance in their designs
Series | TrenchFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 270mOhm @ 900mA, 4.5V | Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.7 nC @ 4.5 V | Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 15 V | Power Dissipation (Max) | 340mW (Ta), 370mW (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI1304 |
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