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Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SOT-23-3Manufacturer:
Mfr.Part #:
SI2300DS-T1-GE3
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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The SI2300DS-T1-GE3 from Vishay Siliconix is a high-performance P-channel MOSFET transistor that packs a punch in a small package. With its tiny chip size of 1.61 mm x 1.61 mm, it's perfect for applications where space is limited but performance is key. This transistor boasts impressive specs, including a maximum drain-source voltage of -20 V, a continuous drain current of -3.1 A, and a power dissipation of 1.8 W. Its low on-resistance of 0.18 ohms at a gate-source voltage of -4.5 V ensures efficient power conversion and minimal power loss, making it a top choice for power management and load switching applications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 3.6 A | Rds On - Drain-Source Resistance | 68 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 11 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 15 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 10 ns |
Width | 1.6 mm | Part # Aliases | SI2300DS-T1-BE3 SI2300DS-GE3 |
Unit Weight | 0.000282 oz |
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