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Tape and Reel Packaged P-Channel MOSFET, 20V, 2.2A, TO-236 Configuration"
SOTManufacturer:
Mfr.Part #:
SI2301BDS-T1-GE3
Datasheet:
Series:
TrenchFET®
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
20 V
EDA/CAD Models:
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P-Channel 20 V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2.8A, 4.5V | Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 6 V | FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI2301 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.158 | $0.16 |
10+ | $0.130 | $1.30 |
30+ | $0.118 | $3.54 |
100+ | $0.104 | $10.40 |
500+ | $0.097 | $48.50 |
1000+ | $0.093 | $93.00 |
The prices below are for reference only.