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P-Channel 20 V 2.3A (Ta), 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
SOTManufacturer:
Mfr.Part #:
SI2301CDS-T1-BE3
Datasheet:
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta), 3.1A (Tc)
EDA/CAD Models:
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P-Channel 20 V 2.3A (Ta), 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
Series | - | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta), 3.1A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 112mOhm @ 2.8A, 4.5V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 10 V | FET Feature | - |
Power Dissipation (Max) | 860mW (Ta), 1.6W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
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