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Surface Mount N-Channel MOSFET with 40V VDS and 0.042 Ohm RDS(ON) in SOT-23-3 Package
SOT-23-3Manufacturer:
Mfr.Part #:
SI2318CDS-T1-GE3
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Packaged in an easily integrable SOT-23 package, this transistor is a space-saving solution for compact PCB designs. Its wide operating temperature range of -55°C to 150°C ensures stable and reliable performance even in demanding environmental conditions. Whether you're working on industrial automation, consumer electronics, or automotive applications, the SI2318CDS-T1-GE3 is a versatile and dependable choice. Upgrade your switching circuits with this high-quality MOSFET transistor and experience improved efficiency and performance like never before. Stay ahead of the curve with the exceptional capabilities of the SI2318CDS-T1-GE3
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 5.6 A | Rds On - Drain-Source Resistance | 42 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 2.9 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.1 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 8 ns | Product Type | MOSFET |
Rise Time | 20 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 14 ns | Typical Turn-On Delay Time | 7 ns |
Part # Aliases | SI2318CDS-T1-BE3 SI2318CDS-GE3 | Unit Weight | 0.000282 oz |
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