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SI2325DS-T1-GE3 +BOM
Compact SOT-23 MOSFET designed for use in circuits requiring -150V Vds and 20V Vgs limitations
SOT-23-
Manufacturer:
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Mfr.Part #:
SI2325DS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7181 PCS
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SI2325DS-T1-GE3 General Description
Engineered for power management, load switching, and battery protection circuits, the SI2325DS-T1-GE3 offers reliable performance and lightning-fast switching speeds. Its maximum power dissipation of 0.75W allows for sustained operation under heavy loads, making it a versatile choice for a wide range of electronic applications
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
Id - Continuous Drain Current | 530 mA | Rds On - Drain-Source Resistance | 1.2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Qg - Gate Charge | 7.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 750 mW |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 11 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 16 ns | Typical Turn-On Delay Time | 7 ns |
Width | 1.6 mm | Part # Aliases | SI2325DS-T1-BE3 SI2325DS-GE3 |
Unit Weight | 0.000282 oz |
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In Stock: 7,181
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.352 | $0.35 |
10+ | $0.306 | $3.06 |
30+ | $0.285 | $8.55 |
100+ | $0.261 | $26.10 |
500+ | $0.249 | $124.50 |
1000+ | $0.243 | $243.00 |
The prices below are for reference only.