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SI2337DS-T1-GE3 +BOM
P-Channel 80 V (D-S) MOSFET
TO-236-3,SC-59,SOT-23-3-
Manufacturer:
Vishay Siliconix
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Mfr.Part #:
SI2337DS-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
80 V
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EDA/CAD Models:
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Availability: 6526 PCS
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SI2337DS-T1-GE3 General Description
P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Key Features
- Low power consumption
- Small form factor
- Economical pricing
Specifications
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 40 V | Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI2337 |
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In Stock: 6,526
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.605 | $0.60 |
10+ | $0.500 | $5.00 |
30+ | $0.447 | $13.41 |
100+ | $0.396 | $39.60 |
500+ | $0.331 | $165.50 |
1000+ | $0.316 | $316.00 |
The prices below are for reference only.
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