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SI2356DS-T1-GE3 +BOM
channel operation
SOT-23-3-
Manufacturer:
-
Mfr.Part #:
SI2356DS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 4850 PCS
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SI2356DS-T1-GE3 General Description
Meet the SI2356DS-T1-GE3, a high-performance N-Channel MOSFET transistor that can handle a continuous drain current of 4.3A and a drain-source voltage of 40V. Its low on-resistance of 0.042ohm at a test voltage of 10V ensures minimal power loss and maximum efficiency in your circuit designs. With a threshold voltage of 1.5V, this transistor provides precise control and reliable operation, making it an ideal choice for demanding applications where performance and reliability are crucial
Key Features
Application
DC/DC Converter |Load Switch |LED Backlighting |Power ManagementSpecifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 4.3 A | Rds On - Drain-Source Resistance | 51 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 3.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 6 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 12 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 13 ns | Typical Turn-On Delay Time | 6 ns |
Width | 1.6 mm | Part # Aliases | SI2356DS-T1-BE3 |
Unit Weight | 0.000282 oz |
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In Stock: 4,850
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