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SI2365EDS-T1-GE3 +BOM
Low Voltage 4.5V 1V at 250uA
SOT-23-3-
Manufacturer:
-
Mfr.Part #:
SI2365EDS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 6691 PCS
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SI2365EDS-T1-GE3 General Description
The SI2365EDS-T1-GE3 is a P-channel MOSFET with a drain source voltage of -20V and a continuous drain current of -5.9A. This MOSFET has a low on resistance of 0.0265ohm and a threshold voltage of -1V. With a power dissipation of 1.7W, this transistor is designed for high power applications. The SOT-23 package style with 3 pins makes it compact and easy to integrate into circuit designs. The operating temperature range of up to 150°C ensures reliable performance in various environments. The SI2365EDS-T1-GE3 is part of the TrenchFET Series, known for its high-quality and performance. It meets automotive qualification standards and has a MSL rating of MSL 1, indicating it can be stored indefinitely. This product does not contain any SVHC substances, making it environmentally friendly and compliant with regulations
Key Features
- High-speed switching
- Low voltage drop
- Compact package
Application
Power Management for Portable and Consumer - Load Switches - DC/DC ConvertersSpecifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 26.5 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 13.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 14 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 21 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 62 ns | Typical Turn-On Delay Time | 22 ns |
Width | 1.6 mm | Part # Aliases | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S |
Unit Weight | 0.000282 oz |
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In Stock: 6,691
Minimum Order: 1
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