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P-Channel 20 V (D-S) MOSFET
SOTManufacturer:
VISHAY SILICONIX
Mfr.Part #:
SI2367DS-T1-GE3
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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P-Channel 20 V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Product Category: | MOSFET | Technology: | Si |
Mounting Style: | SMD/SMT | Transistor Polarity: | P-Channel |
Number of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 3.8 A | Rds On - Drain-Source Resistance: | 66 mOhms |
Vgs - Gate-Source Voltage: | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage: | 1 V |
Qg - Gate Charge: | 9 nC | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 1.7 W |
Channel Mode: | Enhancement | Tradename: | TrenchFET |
Series: | SI2 | Packaging: | MouseReel |
Configuration: | Single | Fall Time: | 10 ns |
Height: | 1.45 mm | Length: | 2.9 mm |
Product Type: | MOSFET | Rise Time: | 20 ns |
Factory Pack Quantity: | 3000 | Subcategory: | MOSFETs |
Transistor Type: | 1 P-Channel | Typical Turn-Off Delay Time: | 40 ns |
Typical Turn-On Delay Time: | 20 ns | Width: | 1.6 mm |
Part # Aliases: | SI2367DS-T1-BE3 SI2367DS-GE3 | Unit Weight: | 0.000282 oz |
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 66mOhm @ 2.5A, 4.5V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 8 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 561 pF @ 10 V | Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI2367 |
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