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SI2374DS-T1-GE3 +BOM
Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SOT-23-3-
Manufacturer:
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Mfr.Part #:
SI2374DS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 9751 PCS
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SI2374DS-T1-GE3 General Description
The SI2374DS-T1-GE3 P-channel MOSFET transistor is a versatile component ideal for a wide range of high-speed switching applications. With a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -1.8A, this transistor offers reliable performance in various power management scenarios. Its low on-resistance (RDS(on)) of 0.038 ohms ensures efficient power distribution in portable devices, battery-powered equipment, and load switching applications
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 30 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 7.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 10 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 23 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 16 ns | Typical Turn-On Delay Time | 10 ns |
Width | 1.6 mm | Part # Aliases | SI2374DS-T1-BE3 |
Unit Weight | 0.000282 oz |
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In Stock: 9,751
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