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SI2377EDS-T1-GE3 +BOM
P-Channel 20 V (D-S) MOSFET
SOT-
Manufacturer:
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Mfr.Part #:
SI2377EDS-T1-GE3
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Datasheet:
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Series:
TrenchFET®
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
20 V
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EDA/CAD Models:
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Availability: 3323 PCS
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SI2377EDS-T1-GE3 General Description
Ideal for use as a switch or amplifier in electronic devices, the SI2377EDS-T1-GE3 transistor is easy to integrate into circuit designs and offers precise control over current flow. Its P-channel design and single-element construction make it versatile and compatible with a wide range of applications. Whether used in consumer electronics, industrial equipment, or automotive systems, this MOSFET transistor delivers consistent and reliable performance
Key Features
- Ultra-Low Noise Amplifier
- Fast Overvoltage Protection
- Advanced Current Limiting
Application
- 1. Power management circuitry
- 2. Load switching
- 3. Battery protection
- 4. Voltage regulation
- 5. Motor control
Specifications
Series | TrenchFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 61mOhm @ 3.2A, 4.5V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 8 V | Vgs (Max) | ±8V |
FET Feature | - | Power Dissipation (Max) | 1.25W (Ta), 1.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SI2377 |
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In Stock: 3,323
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