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SI4166DY-T1-GE3 +BOM

SI4166DY-T1-GE3 MOSFET with N-channel, 30V voltage rating, and 30.5A current capacity in a SOIC package

Manufacturer:

VISHAY
Mfr.Part #:

SI4166DY-T1-GE3
Datasheet:

SI4166DY-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

8
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

45 mJ
EDA/CAD Models:

Request Free CAD Models for SI4166DY-T1-GE3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI4166DY-T1-GE3 General Description

Product SI4166DY-T1-GE3 is a small signal field-effect transistor with a maximum drain current (I(D)) of 20.5A and a maximum voltage of 30V. This transistor is designed with 1 element, operating as an N-channel device using silicon technology. It belongs to the metal-oxide semiconductor FET family of transistors, ensuring reliable and efficient performance

Key Features

Halogen-free

TrenchFET Power MOSFET

100 % Rg Tested

100 % UIS Tested

Application

Low-Side DC/DC Conversion - Notebook PC - Gaming

Specifications

Part Life Cycle Code	Transferred	Pin Count	8
Reach Compliance Code		ECCN Code	EAR99
Avalanche Energy Rating (Eas)	45 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	20.5 A
Drain-source On Resistance-Max	0.0039 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	205 pF	JEDEC-95 Code	MS-012AA
JESD-30 Code	R-PDSO-G8	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	6.5 W	Pulsed Drain Current-Max (IDM)	70 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	PURE MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	95 ns
Turn-on Time-Max (ton)	54 ns