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SI4425DDY-T1-GE3 +BOM

SOIC 8-Pin P-Channel Transistor with 30V Voltage Rating and 19.7A Current Handling

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SI4425DDY-T1-GE3 General Description

P-Channel 30 V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

SI4425DDY-T1-GE3

Key Features

  • High-speed switching performance
  • Advanced thermal management
  • Ruggedized design for harsh environments
  • Suitable for industrial control applications
  • Excellent noise immunity and EMI reduction
  • Compliant with major industry standards

Application

["Load Switches - Notebook PCs - Desktop PCs S"]

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 19.7 A
Rds On - Drain-Source Resistance 9.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 53 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 5.7 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Configuration Single Fall Time 9 ns
Forward Transconductance - Min 40 S Product Type MOSFET
Rise Time 9 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 42 ns Typical Turn-On Delay Time 12 ns
Part # Aliases SI4425DDY-GE3 Unit Weight 0.026455 oz

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