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SKW07N120 +BOM

125W Insulated Gate Bipolar Transistor with Non-Punch Through Technology

SKW07N120 General Description

The unparalleled combination of a fast switching speed and low gate charge in the SKW07N120 power MOSFET transistor enables high-frequency operation and reduces switching losses, effectively enhancing the efficiency and performance of the applications it serves. Housed in a TO-247 package, the transistor also offers excellent thermal conductivity for effective heat dissipation, ensuring optimal operating temperatures and increased reliability

skw07n120

Key Features

  • Suitable for high-frequency applications
  • Low VCE(sat) for high efficiency
  • Easy installation with a single screw
  • Improved thermal management

Application

  • Energy solutions
  • Power control
  • Heating systems

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series SKW07N120 Continuous Collector Current Ic Max 16.5 A
Height 20.95 mm Length 15.9 mm
Product Type IGBT Transistors Factory Pack Quantity 240
Subcategory IGBTs Width 5.3 mm
Part # Aliases SKW07N120XK SP000012569 SKW07N120FKSA1 Unit Weight 1.340411 oz

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Ratings and Reviews

More
R
R**d 11/21/2023

I was surprised Ankara TURKEY arrived in 9 days. It reached very fast. Thank you to seller or. Hope it works smoothly.

4
M
M**r 10/12/2021

Easy communication. Very good support\nThank you

7
L
L**m 09/21/2021

Arrived very quickly, the goods are excellent!!! Recommend!!!!

9
B
B**n 09/12/2021

The product corresponds to the description. The track was tracked to the delivery address, ukrpost office. Package 25 days. Checked for efficiency-while everything is ok!

13

Reviews

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