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SMP3003-DL-1E +BOM

Power Field-Effect Transistor, 100A I(D), 75V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer:

ON SEMICONDUCTOR
Mfr.Part #:

SMP3003-DL-1E
Datasheet:

SMP3003-DL-1E Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

2
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for SMP3003-DL-1E

SMP3003-DL-1E General Description

The SMP3003-DL-1E MOSFET is a versatile and reliable component that offers exceptional performance in power management applications. With a P Channel transistor polarity and a continuous drain current of -100A, this transistor can efficiently handle power distribution in various circuit configurations. The TO-263 case style and 3-pin design enhance versatility and ease of installation. Its operating temperature range of up to 150°C ensures stable performance in challenging environments, making it a preferred choice for automotive and industrial applications

Key Features

Very low profile - typical height of 1.0 mm
Ideal for automated placement
Available in uni-directional
400 W peak pulse power capability with a 10/1000 µs waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Specifications

Source Content uid	SMP3003-DL-1E	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	2
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	468 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	75 V
Drain Current-Max (ID)	100 A	Drain-source On Resistance-Max	0.011 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	400 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON