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Complementary Bipolar Digital Transistor (BRT)
SOT-363Manufacturer:
Mfr.Part #:
SMUN5313DW1T1G
Datasheet:
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
47kOhms
EDA/CAD Models:
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This innovative digital transistor series offers a unique advantage by eliminating the need for individual devices and their respective resistor bias networks. The Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network, streamlining your design and reducing overall system complexity, making it an attractive option for those seeking to simplify their circuitry
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased | Series | - |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V | Resistor - Base (R1) | 47kOhms |
Resistor - Emitter Base (R2) | 47kOhms | DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - | Power - Max | 187mW |
Mounting Type | Surface Mount | Base Product Number | SMUN5313 |
Product Category | Bipolar Transistors - Pre-Biased | Configuration | Dual |
Transistor Polarity | NPN, PNP | Typical Input Resistor | 47 kOhms |
Typical Resistor Ratio | 1 | Mounting Style | SMD/SMT |
DC Collector/Base Gain hfe Min | 80 | Collector- Emitter Voltage VCEO Max | 50 V |
Continuous Collector Current | 100 mA | Pd - Power Dissipation | 187 mW |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Number of Channels | 2 Channel | Product Type | BJTs - Bipolar Transistors - Pre-Biased |
Qualification | AEC-Q101 | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Unit Weight | 0.000265 oz |
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