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See Technical Specifications

SP8K52HZGTB +BOM

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Manufacturer:

ROHM Semiconductor
Mfr.Part #:

SP8K52HZGTB
Datasheet:

SP8K52HZGTB Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
Drain To Source Voltage (Vdss):

100V
Current - Continuous Drain (Id) @ 25°C:

3A (Ta)
EDA/CAD Models:

Request Free CAD Models for SP8K52HZGTB

SP8K52HZGTB General Description

When it comes to automotive electronics, quality and reliability are paramount, which is why the SP8K52HZGTB is the ideal choice for your next project. Its dual N-channel 100V MOSFETs provide the power and efficiency needed for demanding applications, while the SOP8 package offers convenience and ease of use. The inclusion of an ESD protection diode further enhances the overall robustness of this MOSFET, making it a reliable option for critical switching functions in automotive systems

Key Features

Low on-resistance
Small Surface Mount Package (SOP8)
Pb-free lead plating ; RoHS compliant
AEC-Q101 Qualified

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	-
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	-	Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)	Rds On (Max) @ Id, Vgs	170mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 25V	Power - Max	2W (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SP8K52