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SPC584C70E3F001X +BOM

Embedded system solution for modern application

SPC584C70E3F001X General Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

STMicroelectronics, Inc Inventory

Key Features

  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high-voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK2 compliant
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

prmis_id CP539351 parent_id PF262825
item_name SPC584C70E3F001X p_4906 false
p_445 p_5113 0
p_1387 p_163 Active
p_4418

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