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SQ3427EEV-T1-GE3 +BOM

60V P-Channel MOSFET with 5.5A Rating

Manufacturer:

VISHAY
Mfr.Part #:

SQ3427EEV-T1-GE3
Datasheet:

SQ3427EEV-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for SQ3427EEV-T1-GE3

SQ3427EEV-T1-GE3 General Description

Designed for high-power applications, the SQ3427EEV-T1-GE3 is a P-channel MOSFET with a drain-source voltage rating of 60V and a continuous drain current of 5.5A. It has an on-resistance of 0.067ohm at a test voltage of -10V and a power dissipation of 5W. With an operating temperature range from -55°C to 175°C, this MOSFET is suitable for a variety of environmental conditions. It comes in a TSOP case style with 6 pins and has an MSL rating of MSL 1 - Unlimited

Key Features

1. Low leakage current
2. Fast switching speed
3. Small and compact package
4. High reliability
5. Low capacitance

Application

1. Voltage clamping
2. Rectification
3. Switching operations in electronic circuits
4. Signal conditioning
5. Protection against ESD (Electrostatic Discharge)

Specifications

Series	TrenchFET®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	82mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1125 pF @ 30 V	FET Feature	-
Power Dissipation (Max)	5W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SQ3427