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STA412A +BOM
Power bipolar transistor with a maximum collector current of 3A and a breakdown voltage of 60V
10-SIP-
Manufacturer:
Sanken Electric USA Inc.
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Mfr.Part #:
STA412A
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Datasheet:
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Transistor Type:
4 NPN (Quad)
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Current - Collector (Ic) (Max):
3A
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Voltage - Collector Emitter Breakdown (Max):
60V
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Vce Saturation (Max) @ Ib, Ic:
1V @ 10mA, 1A
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EDA/CAD Models:
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STA412A General Description
Bipolar (BJT) Transistor Array 4 NPN (Quad) 60V 3A 4W Through Hole 10-SIP
Specifications
Transistor Type | 4 NPN (Quad) | Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 60V | Vce Saturation (Max) @ Ib, Ic | 1V @ 10mA, 1A |
Current - Collector Cutoff (Max) | 100µA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 4V |
Power - Max | 4W | Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | STA412 |
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In Stock: 8,773
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