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STB11N65M5 +BOM
Power Field-Effect Transistor
TO-263-3-
Manufacturer:
-
Mfr.Part #:
STB11N65M5
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Datasheet:
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Part Life Cycle Code:
Active
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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Avalanche Energy Rating (Eas):
130 mJ
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EDA/CAD Models:
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Availability: 6854 PCS
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STB11N65M5 General Description
The STB11N65M5 N-channel Power MOSFET leverages the innovative MDmesh™ M5 technology and PowerMESH™ layout to deliver exceptional performance. Characterized by extremely low on-resistance, this device is designed for applications where high power and efficiency are critical
Key Features
- Power electronic device
- High-reliability design
- Wide operating temperature range
- Excellent electromagnetic immunity
- Low input capacitance
Specifications
Source Content uid | STB11N65M5 | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 130 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 650 V | Drain Current-Max (ID) | 9 A |
Drain-source On Resistance-Max | 0.48 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB | JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 85 W |
Pulsed Drain Current-Max (IDM) | 36 A | Surface Mount | YES |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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In Stock: 6,854
Minimum Order: 1
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