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See Technical Specifications

STB25NM50N +BOM

500V 0.14ohm N-CHANNEL Si POWER MOSFET 22A D2PAK-3

Manufacturer:

Stmicroelectronics
Mfr.Part #:

STB25NM50N
Datasheet:

STB25NM50N Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for STB25NM50N

STB25NM50N General Description

From power supplies to motor control systems, lighting ballasts, and automotive applications, the STB25NM50N is well-suited for a wide range of power switching tasks. Its robust design and high voltage rating make it a reliable choice for demanding environments where efficient power management is essential

Key Features

The STB25NM50N offers low on-resistance for efficient power handling.
It features built-in protection against overvoltage and overheating.
This transistor ensures reliable operation in industrial systems.

Application

Enhanced power efficiency
Long-lasting durability
Precision power management

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	22 A	Rds On - Drain-Source Resistance	140 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	160 W
Channel Mode	Enhancement	Series	STB25NM50N
Configuration	Single	Fall Time	22 ns
Height	4.6 mm	Length	10.4 mm
Product Type	MOSFET	Rise Time	23 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	75 ns
Typical Turn-On Delay Time	23 ns	Width	9.35 mm
Unit Weight	0.139332 oz