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N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package
DPAKManufacturer:
STMicroelectronics
Mfr.Part #:
STD2N62K3
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 620 V |
Id - Continuous Drain Current | 2.2 A | Rds On - Drain-Source Resistance | 3.6 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 15 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 45 W |
Channel Mode | Enhancement | Tradename | MDmesh |
Series | STD2N62K3 | Configuration | Single |
Fall Time | 22 ns | Product Type | MOSFET |
Rise Time | 4.4 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 21 ns | Typical Turn-On Delay Time | 8 ns |
Unit Weight | 0.011640 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.895 | $0.90 |
10+ | $0.751 | $7.51 |
30+ | $0.678 | $20.34 |
100+ | $0.606 | $60.60 |
500+ | $0.564 | $282.00 |
1000+ | $0.541 | $541.00 |
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