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Power FET, Single N-Channel, Silicon Metal-oxide Semiconductor, 26A Drain Current, 900V Voltage, 0.3ohm RDS(on)
ISOTOPManufacturer:
STMicroelectronics
Mfr.Part #:
STE26NA90
Datasheet:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
EDA/CAD Models:
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N-Channel 900 V 26A (Tc) 450W (Tc) Chassis Mount ISOTOP®
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900 V | Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 300mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 3.75V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 660 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
Power Dissipation (Max) | 450W (Tc) | Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount | Base Product Number | STE26 |
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