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STGWA50IH65DF +BOM

Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package

Manufacturer:

ST
Mfr.Part #:

STGWA50IH65DF
Datasheet:

STGWA50IH65DF Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Case Connection:

COLLECTOR
EDA/CAD Models:

Request Free CAD Models for STGWA50IH65DF

STGWA50IH65DF General Description

Introducing the STGWA50IH65DF, a cutting-edge IGBT with a voltage rating of 650 V. This innovative design utilizes a proprietary trench gate field-stop structure to deliver superior performance in both conduction and switching losses. Specifically engineered for soft commutation, this product includes a high-efficiency freewheeling diode to ensure maximum efficiency in resonant and soft-switching applications

Key Features

Designed for soft-commutation only
Maximum junction temperature: T_J = 175 °C
V_CE(sat) = 1.5 V (typ.) @ I_C = 50 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low voltage drop freewheeling co-packaged diode
Positive V_CE(sat) temperature coefficient

Specifications

Source Content uid	STGWA50IH65DF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Case Connection	COLLECTOR	Collector Current-Max (IC)	100 A
Collector-Emitter Voltage-Max	650 V	Configuration	SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	7 V	Gate-Emitter Voltage-Max	20 V
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	300 W	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	294 ns	VCEsat-Max	2 V