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SUM70101EL-GE3 Vishay P-Channel 100-V (D-S) 175C Mosfet Rohs Compliant: Yes
D2PAK-3 (TO-263-3)Manufacturer:
Mfr.Part #:
SUM70101EL-GE3
Datasheet:
REACH:
Details
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
P-Channel
EDA/CAD Models:
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The SUM70101EL-GE3 is a powerful P-channel MOSFET designed for high-performance applications. With a drain source voltage (Vds) of -100V and a continuous drain current (Id) of -120A, this transistor offers reliable and efficient operation. Its low on resistance (Rds(on) of 0.0081ohm) and high threshold voltage (Vgs) of -2.5V make it suitable for demanding tasks. The TO-263 case style and 3 pins provide easy integration into various electronic systems. With a high power dissipation of 375W and an operating temperature max of 175°C, this MOSFET is built to withstand extreme conditions. Part of the TrenchFET Series, it meets the stringent requirements of automotive applications. Its MSL 1 - Unlimited and absence of SVHC make it a safe and reliable choice for electronic designs
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 120 A |
Rds On - Drain-Source Resistance | 10.1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 125 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 375 W | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 40 ns |
Forward Transconductance - Min | 60 S | Product Type | MOSFET |
Rise Time | 40 ns | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 110 ns | Typical Turn-On Delay Time | 20 ns |
Unit Weight | 0.139332 oz |
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