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See Technical Specifications

SZESD7451N2T5G +BOM

451N2T5G', , 3.3V, XDFN-2":

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SZESD7451N2T5G
Datasheet:

SZESD7451N2T5G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Type:

Zener
Bidirectional Channels:

1
Voltage - Reverse Standoff (Typ):

3.3V (Max)
EDA/CAD Models:

Request Free CAD Models for SZESD7451N2T5G

SZESD7451N2T5G General Description

The SZESD7451N2T5G TVS diode from ON Semiconductor is the ideal solution for protecting sensitive electronic equipment from voltage transients. With a peak pulse power rating of 400W and the ability to dissipate transients up to 10/1000 μs, this diode offers robust protection against ESD and other transient voltage events. Its low clamping voltage ensures effective protection for downstream components, while the 5V working voltage and low leakage current of 0.1μA make it a power-efficient choice for electronic systems

Key Features

Breakdown voltage: 7.5V
Maximum clamping voltage: 15.4V
Peak pulse current: 21.6A
Low leakage current
Small size (SOD-523 package)

Application

Protection of sensitive electronic circuits from ESD and other high-voltage transients
Surge protection in telecommunications equipment
Overvoltage protection in battery-powered devices
Protection of USB ports and other I/O interfaces

Specifications

Category	Circuit ProtectionTransient Voltage Suppressors (TVS)TVS Diodes	Series	Automotive, AEC-Q101
Type	Zener	Bidirectional Channels	1
Voltage - Reverse Standoff (Typ)	3.3V (Max)	Voltage - Breakdown (Min)	6V (Typ)
Voltage - Clamping (Max) @ Ipp	-	Current - Peak Pulse (10/1000µs)	-
Power - Peak Pulse	-	Power Line Protection	No
Applications	Automotive, RF Antenna	Capacitance @ Frequency	0.25pF @ 1MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SZESD7451