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2Gbit VFBGA-67 NAND FLASH
VFBGA-67Manufacturer:
KIOXIA HOLDINGS CORP
Mfr.Part #:
TC58NVG1S3HBAI6
Datasheet:
Part Life Cycle Code:
Active
ECCN Code:
EAR99
HTS Code:
8542.32.00.51
JESD-30 Code:
R-PBGA-B67
EDA/CAD Models:
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The TC58NVG1S3HBAI6, manufactured by Toshiba, is a cutting-edge NAND flash memory chip that represents the latest in 3D NAND technology. With its 64-layer vertical NAND architecture, this chip offers a capacity of 32 gigabytes, making it an ideal choice for a wide range of consumer electronic devices. Whether it's smartphones, tablets, solid-state drives, or digital cameras, this chip provides high-speed data transfer rates, reliable performance, and low power consumption, making it an indispensable component for any storage solution. Furthermore, advanced error correction and wear-leveling algorithms ensure data integrity and longevity, giving users peace of mind when it comes to their valuable information. The chip also supports various interfaces, including ONFI 3.1 and Toggle 2.0, making it versatile and easy to integrate into different systems
Part Life Cycle Code | Active | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code | 8542.32.00.51 |
JESD-30 Code | R-PBGA-B67 | Length | 8 mm |
Memory Density | 2147483648 bit | Memory IC Type | FLASH |
Memory Width | 8 | Number of Functions | 1 |
Number of Terminals | 67 | Number of Words | 268435456 words |
Number of Words Code | 256000000 | Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 256MX8 | Parallel/Serial | PARALLEL |
Programming Voltage | 3.3 V | Seated Height-Max | 1 mm |
Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | INDUSTRIAL |
Terminal Form | BALL | Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM | Type | SLC NAND TYPE |
Width | 6.5 mm |
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