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TC58NVG2S0HTAI0 +BOM

TC58NVG2S0HTAI0 product with 4Gbit capacity, built on 24nm technology, suitable for VCC between 2.7V and 3.6V

Manufacturer:

Kioxia America, Inc.
Mfr.Part #:

TC58NVG2S0HTAI0
Datasheet:

TC58NVG2S0HTAI0 Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND (SLC)
EDA/CAD Models:

Request Free CAD Models for TC58NVG2S0HTAI0

TC58NVG2S0HTAI0 General Description

The TC58NVG2S0HTAI0 NAND flash memory chip by Toshiba is a cutting-edge storage solution that combines high capacity with fast performance. Boasting a generous 256 gigabytes capacity, this chip utilizes 64-layer 3D NAND technology to deliver reliable data storage for a wide range of applications. With read speeds of up to 533 MB/s and write speeds of up to 518 MB/s, the TC58NVG2S0HTAI0 chip ensures quick access to your data, making it ideal for solid-state drives and tablets that demand high-speed performance

Key Features

Organization x8 Memory cell array 4352 × 128K × 8 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND (SLC)
Memory Size	4Gbit	Memory Organization	512M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	25ns	Access Time	25 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount